Sinopsis
Data sheets are often the sole source of information about the capability and characteristics of a product. This is particularly true of unique RF semiconductor devices that are used by equipment designers all over the world. Because circuit designers often cannot talk directly with the factory, they rely on the data sheet for their device information.1 And for RF devices, many of the specifications are unique in themselves. Thus it is important that the user and the manufacturer of RF products speak a common language—that is, what semiconductor manufacturers say about their RF devices should be understood fully by the circuit designers.
In this chapter, a review is given of RF transistor and amplifier module parameters from maximum ratings to functional characteristics. The section is divided into five basic parts: D.C. specifications, power transistors, low power transistors, power modules, and linear modules. Comments are made about critical specifications, about how values are determined and what their significance is. A brief description of the procedures used to obtain impedance data and thermal data is set forth, the importance of test circuits is elaborated, and background information is given to help understand low noise considerations and linearity requirements.
Content
- Understanding RF Data Sheet Parameters
- RF Transistor Fundamentals
- FETs and BJTs: Comparison of Parameters and Circuitry
- Other Factors Affecting Amplifier Design
- Reliability Considerations
- Construction Techniques
- Power Amplifier Design
- Computer-Aided Design Programs
- After the Power Amplifier
- Wideband Impedance Matching
- Power Splitting and Combining Frequency Compensation and Negative Feedback
- Small Signal Amplifier Design
- LDMOS RF Power Transistors and Their Applications
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